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CDFG6558N

29A,650V Surface mount MOSFET N-Channel GaN

Case Type: DFN8X8

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
225 pF
Common Source Output Capacitance (Coss)
70 pF
Common Source Reverse Transfer Capacitance (Crss)
0.5 pF
Continuous Drain Current (ID)
29 A
Diode Forward On Voltage (VSD)
2.3 V
Drain-Source Voltage (VDS)
650 V
Effective Output Capacitance, Energy Related (Co(er))
105 pF
Effective Output Capacitance, Time Relateded (Co(tr))
150 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
163 µA
Gate Leakage Current, Reverse (IGSSR)
163 µA
Gate Resistance (RG)
3 Ω
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V

(1.7 V Typical)

Gate-Drain Charge (Qgd)
2.2 nC
Gate-Source Charge (Qgs)
0.5 nC
Gate-Source Voltage (VGS)
-6 — 7 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
58 A
Output Charge (Qoss)
60 nC
Power Dissipation (PD)
1.1 W
Power Dissipation (PD)
188 W
Rise Time (tr)
4 ns
Saturation Drain Current (IDSS)
65 µA

(5 µA Typical)

Static Drain-Source On Resistance (rDS(ON))
80 mΩ

(60 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
6.2 nC
Turn-off Delay Time (tOFF)
5 ns
Turn-on Delay Time (tON)
3 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDFG6558N BK Box@100 Active 29A,650V Surface mount MOSFET N-Channel GaN EAR99 8541.29.0095 PBFREE
CDFG6558N TR13 Tape & Reel@2,500 Active 29A,650V Surface mount MOSFET N-Channel GaN EAR99 8541.29.0095 PBFREE

Resources

Item Type
Product Brief:New GaN FETs Product Brief
Spice Model:CDFG6558N Spice Model

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