CDMS24720-170

1700V Through-Hole MOSFET N-Channel SiC

Case Type: TO-247

Body Diode Stored Charge (Qrr)
0.4 µC
Common Source Input Capacitance (Ciss)
3.5 nF
Common Source Output Capacitance (Coss)
180 pF
Common Source Reverse Transfer Capacitance (Crss)
22 pF
Diode Forward On Voltage (VSD)
5 V
Drain-Source Voltage (VDS)
1700 V
Fall Time (tf)
27 ns
Gate Leakage Current (IGSS)
500 pA

(120 pA Typical)

Gate Resistance (RG)
3.5 Ω
Gate Threshold Voltage (VGS(th))
5 V

(2.6 V Typical)

Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 175 °C
Maximum Pulsed Drain Current (IDM)
75 A
Power Dissipation (PD)
28 W
Rise Time (tr)
75 ns
Saturation Drain Current (IDSS)
500 nA

(175 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
35 mΩ

(20 mΩ Typical)

Storage Temperature (Tstg)
-55 — 175 °C
Stored Energy at Output (Eoss)
150 µJ
Transconductance (GM)
19 S
Turn off Switching Energy (Eoff)
600 µJ
Turn On Switching Energy (Eon)
2700 µJ
Turn-off Delay Time (tOFF)
45 ns
Turn-on Delay Time (tON)
25 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDMS24720-170 SL Sleeve@30 Active 1700V Through-Hole MOSFET N-Channel SiC EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Molding Compound Analytical Test Report
Analytical Test Report:Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
Material Composition:TO-247 Material Composition
Package Detail Document:TO-247 Package Detail Document
Product Reliability Data:TO-247 Package Reliability Product Reliability Data

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