CDMS24740-170

1700V Through-Hole MOSFET N-Channel SiC

Case Type: TO-247

Common Source Input Capacitance (Ciss)
3.5 nF
Common Source Output Capacitance (Coss)
240 pF
Common Source Reverse Transfer Capacitance (Crss)
35 pF
Drain-Source Voltage (VDS)
1700 V
Fall Time (tf)
25 ns
Forward Voltage (VF)
5 V

(3.5 V Typical)

Gate Leakage Current (IGSS)
100 pA

(50 pA Typical)

Gate Threshold Voltage (VGS(th))
2.4 V
Gate-Source Voltage (VGS)
20 V
Internal Gate Resistance (RG)
5 Ω
Junction Temperature (Tj)
-55 — 175 °C
Maximum Pulsed Drain Current (IDM)
40 A
Power Dissipation (PD)
100 W
Reverse Recovery Charge (QRR)
230 nC
Rise Time (tr)
35 ns
Saturation Drain Current (IDSS)
100 nA

(15 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
60 mΩ

(40 mΩ Typical)

Storage Temperature (Tstg)
-55 — 175 °C
Stored Energy at Output (Eoss)
10 µJ
Transconductance (GM)
10 S
Turn off Switching Energy (Eoff)
25 µJ
Turn On Switching Energy (Eon)
150 µJ
Turn-off Delay Time (tOFF)
60 ns
Turn-on Delay Time (tON)
35 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDMS24740-170 SL Sleeve@30 Active 1700V Through-Hole MOSFET N-Channel SiC EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Molding Compound Analytical Test Report
Analytical Test Report:Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
Material Composition:TO-247 Material Composition
Package Detail Document:TO-247 Package Detail Document
Product Reliability Data:TO-247 Package Reliability Product Reliability Data

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