CDMS24760-120

21A,1200V Through-Hole MOSFET N-Channel SiC

Case Type: TO-247

Common Source Input Capacitance (Ciss)
0.9 nF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
8 pF
Continuous Drain Current (ID)
21 A
Diode Forward On Voltage (VSD)
5 V
Drain-Source Voltage (VDS)
1200 V
Fall Time (tf)
16 ns
Gate Leakage Current (IGSS)
500 pA

(30 pA Typical)

Gate Resistance (RG)
10 Ω
Gate Threshold Voltage (VGS(th))
5 V

(2.6 V Typical)

Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 175 °C
Maximum Pulsed Drain Current (IDM)
35 A
Power Dissipation (PD)
28 W
Rise Time (tr)
18 ns
Saturation Drain Current (IDSS)
500 nA

(50 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
75 mΩ

(60 mΩ Typical)

Storage Temperature (Tstg)
-55 — 175 °C
Stored Energy at Output (Eoss)
40 µJ
Transconductance (GM)
7 S
Turn off Switching Energy (Eoff)
100 µJ
Turn On Switching Energy (Eon)
600 µJ
Turn-off Delay Time (tOFF)
35 ns
Turn-on Delay Time (tON)
45 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDMS24760-120 SL Sleeve@30 Active 21A,1200V Through-Hole MOSFET N-Channel SiC EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Molding Compound Analytical Test Report
Analytical Test Report:Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
Material Composition:TO-247 Material Composition
Package Detail Document:TO-247 Package Detail Document
Product Brief:SiC MOSFETs Product Brief
Product Reliability Data:TO-247 Package Reliability Product Reliability Data

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