Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
VDS = 200 V
f = 1 MHz
Test Conditions
VDS = 800 V
f = 1 MHz
Test Conditions
VDS = 800 V
f = 1 MHz
Test Conditions
IS = 5 A
Test Conditions
ID = 250 µA
Test Conditions
ID = 10 A
VGS = 15 V
VDS = 1000 V
Test Conditions
VGS = 18 V
(45 pA Typical)
Test Conditions
ID = 2.5 mA
VDS = 18 V
(2.4 V Typical)
Test Conditions
VDS = 1000 V
ID = 10 A
VGS = 15 V
Test Conditions
VDS = 1200 V
(4.5 nA Typical)
Test Conditions
VGS = 18 V
ID = 18 A
(83 mΩ Typical)
Test Conditions
ID = 10 A
VDS = 800 V
VGS = 15 V
Test Conditions
VDS = 1000 V
ID = 10 A
VGS = 15 V
Test Conditions
VDS = 1000 V
ID = 10 A
VGS = 15 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CDMS24783-120 SL | Sleeve@30 | Active | 18A,1200V Through-Hole MOSFET N-Channel SiC | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Molding Compound | Analytical Test Report |
| Analytical Test Report:Plating | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Wire | Analytical Test Report |
| Material Composition:TO-247 | Material Composition |
| Package Detail Document:TO-247 | Package Detail Document |
| Product Brief:SiC MOSFETs | Product Brief |
| Product Reliability Data:TO-247 Package Reliability | Product Reliability Data |
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