2N3669

16A,400V Through-Hole SCR

Case Type: TO-3 50MIL

Average Gate Power (P_G(AV))

0.5 W

Forward Voltage (V_TM)

1.8 V

Gate Trigger Current (I_GT)

1 — 40 mA

Gate Trigger Voltage (V_GT)

2 V

Holding Current (I_H)

0.5 — 50 mA

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

4 A

Peak Off-State Blocking Current (I_DRM)

2 mA

Peak One Cycle Surge Current (I_TSM)

200 A

Peak Repetitive Off-State Voltage (V_DRM)

400 V

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Rate of Rise of Reverse Voltage (dv/dt)

10 V/µs

(400 V/µs Typical)

RMS On-State Current (I_T(RMS))

16 A

Storage Temperature (T_stg)

-40 — 125 °C

Thermal Resistance Junction-Case (Θ_JC)

1.7 °C/W

ueak Reverse Blocking Current (I_RRM)

1 mA

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N3669	Sleeve@20		Discontinued	16A,400V Through-Hole SCR	EAR99	8541.30.0080	PBFREE


Item	Type
No matching documents found.
2N3669-3670.PDF	Device Datasheet
Package Detail Document:TO-3 50MIL	Package Detail Document
Product EOL Notice:2N3669/2N3670	Product EOL Notice