Home / Products / Semiconductors / Thyristors / SCR / 2N881

2N881

.8A,200V Through-Hole SCR

Case Type: TO-18

Average Gate Power (P_G(AV))

0.1 W

Forward Voltage (V_TM)

1.9 V

Gate Trigger Current (I_GT)

200 µA

Gate Trigger Voltage (V_GT)

0.8 V

Holding Current (I_H)

5 mA

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Gate Current (I_FGM)

1 A

Peak Off-State Blocking Current (I_DRM)

10 µA

Peak One Cycle Surge Current (I_TSM)

6 A

Peak Repetitive Off-State Voltage (V_DRM)

200 V

Peak Repetitive Reverse Voltage (V_RRM)

200 V

RMS On-State Current (I_T(RMS))

0.8 A

Storage Temperature (T_stg)

-65 — 150 °C

ueak Reverse Blocking Current (I_RRM)

10 µA

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N881	Box@2,000		Active	.8A,200V Through-Hole SCR	EAR99	8541.30.0080	LEAD or TIN


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
Analytical Test Report:Pure Tin Solder	Analytical Test Report
LSSGP178.PDF	Device Datasheet
Material Composition:TO-18	Material Composition
Package Detail Document:TO-18	Package Detail Document
Product Reliability Data:TO-18 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.