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CS18NZ

1A,800V Through-Hole SCR

Case Type: TO-18

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Technical Specifications

Similar Products with Selected Specifications
Average Gate Power (PG(AV))
0.1 W
Forward Voltage (VTM)
2.15 V

(1.6 V Typical)

Gate Trigger Current (IGT)
20 µA
Gate Trigger Voltage (VGT)
0.8 V

(0.65 V Typical)

Holding Current (IH)
5 mA
Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current (IFGM)
1 A
Peak Gate Power (PGM)
2 W
Peak Off-State Blocking Current (IDRM)
1 µA
Peak Off-State Blocking Current (IDRM)
100 µA
Peak One Cycle Surge Current (ITSM)
10 A
Peak Repetitive Off-State Voltage (VDRM)
800 V
Peak Repetitive Reverse Voltage (VRRM)
800 V
Rate of Rise of Reverse Voltage (dv/dt)
25 V/µs
RMS On-State Current (IT(RMS))
1 A
Storage Temperature (Tstg)
-40 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W
Thermal Resistance Junction-Case (ΘJC)
32 °C/W
ueak Reverse Blocking Current (IRRM)
1 µA
ueak Reverse Blocking Current (IRRM)
100 µA
Value For Fusing (I²T)
0.24 A2s

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CS18NZ Box@2,000 Active 1A,800V Through-Hole SCR EAR99 8541.30.0080 PBFREE

Resources

Item Type
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
CS18BZ_SERIES.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

Product Support

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Design Support

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  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development