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CS39-4N

4A,800V Through-Hole SCR

Case Type: TO-39

Device Datasheet

Technical Specifications

Average Gate Power (P_G(AV))

0.2 W

Forward Voltage (V_TM)

1.95 V

(1.6 V Typical)

Gate Non-Trigger Voltage (V_GD)

0.2 V

Gate Trigger Current (I_GT)

200 µA

(38 µA Typical)

Gate Trigger Voltage (V_GT)

0.8 V

(0.55 V Typical)

Holding Current (I_H)

5 mA

(0.25 mA Typical)

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

1.2 A

Peak Gate Power (P_GM)

3 W

Peak Off-State Blocking Current (I_DRM)

5 µA

Peak Off-State Blocking Current (I_DRM)

200 µA

Peak One Cycle Surge Current (I_TSM)

35 A

Peak Repetitive Off-State Voltage (V_DRM)

800 V

Peak Repetitive Reverse Voltage (V_RRM)

800 V

Rate of Rise of Reverse Voltage (dv/dt)

10 V/µs

RMS On-State Current (I_T(RMS))

4 A

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

180 °C/W

Thermal Resistance Junction-Case (Θ_JC)

10 °C/W

ueak Reverse Blocking Current (I_RRM)

5 µA

ueak Reverse Blocking Current (I_RRM)

200 µA

Value For Fusing (I²T)

4.5 A²s

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CS39-4N	Box@500		Active	4A,800V Through-Hole SCR	EAR99	8541.30.0080	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
CS39-4B.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Process Change Notice:CS39-4M	Process Change Notice
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data