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CS55BZ

.8A,200V Through-Hole SCR

Case Type: TO-92

Device Datasheet

Technical Specifications

Average Gate Power (P_G(AV))

0.1 W

Forward Voltage (V_TM)

1.7 V

Gate Trigger Current (I_GT)

20 µA

Gate Trigger Voltage (V_GT)

0.8 V

Holding Current (I_H)

5 mA

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

1 A

Peak Gate Power (P_GM)

2 W

Peak Gate Voltage (V_GM)

8 V

Peak Off-State Blocking Current (I_DRM)

1 µA

Peak Off-State Blocking Current (I_DRM)

100 µA

Peak One Cycle Surge Current (I_TSM)

10 A

Peak Repetitive Off-State Voltage (V_DRM)

200 V

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Rate of Rise of Reverse Voltage (dv/dt)

25 V/µs

RMS On-State Current (I_T(RMS))

0.8 A

Storage Temperature (T_stg)

-40 — 125 °C

Thermal Resistance Junction-Ambient (Θ_JA)

200 °C/W

Thermal Resistance Junction-Case (Θ_JC)

100 °C/W

ueak Reverse Blocking Current (I_RRM)

1 µA

ueak Reverse Blocking Current (I_RRM)

100 µA

Value For Fusing (I²T)

0.24 A²s

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CS55BZ	Box@2,500		Active	.8A,200V Through-Hole SCR	EAR99	8541.30.0080	LEAD or TIN

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CS55BZ.PDF	Device Datasheet
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