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CS55BZ

.8A,200V Through-Hole SCR

Case Type: TO-92

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Technical Specifications

Similar Products with Selected Specifications
Average Gate Power (PG(AV))
0.1 W
Forward Voltage (VTM)
1.7 V
Gate Trigger Current (IGT)
20 µA
Gate Trigger Voltage (VGT)
0.8 V
Holding Current (IH)
5 mA
Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current (IFGM)
1 A
Peak Gate Power (PGM)
2 W
Peak Gate Voltage (VGM)
8 V
Peak Off-State Blocking Current (IDRM)
1 µA
Peak Off-State Blocking Current (IDRM)
100 µA
Peak One Cycle Surge Current (ITSM)
10 A
Peak Repetitive Off-State Voltage (VDRM)
200 V
Peak Repetitive Reverse Voltage (VRRM)
200 V
Rate of Rise of Reverse Voltage (dv/dt)
25 V/µs
RMS On-State Current (IT(RMS))
0.8 A
Storage Temperature (Tstg)
-40 — 125 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W
Thermal Resistance Junction-Case (ΘJC)
100 °C/W
ueak Reverse Blocking Current (IRRM)
1 µA
ueak Reverse Blocking Current (IRRM)
100 µA
Value For Fusing (I²T)
0.24 A2s

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CS55BZ Box@2,500 Active .8A,200V Through-Hole SCR EAR99 8541.30.0080 LEAD or TIN

Resources

Item Type
Analytical Test Report:Copper Bonding Wire Analytical Test Report
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Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
CS55BZ.PDF Device Datasheet
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Process Change Notice:SCR'S FROM TO-92-18R TO TO-92 Process Change Notice
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

Product Support

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Design Support

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