CSD-4M

4A,600V Surface mount SCR

Case Type: DPAK

Average Gate Power (PG(AV))
200 mW
Forward Voltage (VTM)
1.8 V

(1.6 V Typical)

Gate Trigger Current (IGT)
20 — 200 µA

(38 µA Typical)

Gate Trigger Voltage (VGT)
800 mV

(550 mV Typical)

Holding Current (IH)
2 mA

(0.25 mA Typical)

Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current (IFGM)
1.2 A
Peak Gate Power (PGM)
3 W
Peak Off-State Blocking Current (IDRM)
10 µA
Peak Off-State Blocking Current (IDRM)
200 µA
Peak One Cycle Surge Current (ITSM)
30 A
Peak Repetitive Off-State Voltage (VDRM)
600 V
Peak Repetitive Reverse Voltage (VRRM)
600 V
Rate of Rise of On-State Current (di/dt)
50 A/µs
Rate of Rise of Reverse Voltage (dv/dt)
10 V/µs
RMS On-State Current (IT(RMS))
4 A
Storage Temperature (Tstg)
-40 — 150 °C
ueak Reverse Blocking Current (IRRM)
10 µA
ueak Reverse Blocking Current (IRRM)
200 µA
Value For Fusing (I²T)
4.5 A2s

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CSD-4M BK Box@150 Discontinued, Stock Only 4A,600V Surface mount SCR EAR99 8541.30.0080 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Ni added Al Bond Wire Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CSD-4M.PDF Device Datasheet
Material Composition:DPAK Material Composition
Package Detail Document:DPAK Package Detail Document
Product Reliability Data:DPAK Package Reliability Product Reliability Data

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