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CSD-4M

4A,600V Surface mount SCR

Case Type: DPAK

Device Datasheet

Technical Specifications

Average Gate Power (P_G(AV))

200 mW

Forward Voltage (V_TM)

1.8 V

(1.6 V Typical)

Gate Trigger Current (I_GT)

20 — 200 µA

(38 µA Typical)

Gate Trigger Voltage (V_GT)

800 mV

(550 mV Typical)

Holding Current (I_H)

2 mA

(0.25 mA Typical)

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

1.2 A

Peak Gate Power (P_GM)

3 W

Peak Off-State Blocking Current (I_DRM)

10 µA

Peak Off-State Blocking Current (I_DRM)

200 µA

Peak One Cycle Surge Current (I_TSM)

30 A

Peak Repetitive Off-State Voltage (V_DRM)

600 V

Peak Repetitive Reverse Voltage (V_RRM)

600 V

Rate of Rise of On-State Current (di/dt)

50 A/µs

Rate of Rise of Reverse Voltage (dv/dt)

10 V/µs

RMS On-State Current (I_T(RMS))

4 A

Storage Temperature (T_stg)

-40 — 150 °C

ueak Reverse Blocking Current (I_RRM)

10 µA

ueak Reverse Blocking Current (I_RRM)

200 µA

Value For Fusing (I²T)

4.5 A²s

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CSD-4M BK	Box@150		Discontinued, Stock Only	4A,600V Surface mount SCR	EAR99	8541.30.0080	PBFREE

Resources


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CSD-4M.PDF	Device Datasheet
Material Composition:DPAK	Material Composition
Package Detail Document:DPAK	Package Detail Document
Product Reliability Data:DPAK Package Reliability	Product Reliability Data