Home / Products / Semiconductors / Thyristors / SCR / CSDD-8M

Ordering

CSDD-8M

8A,600V Surface mount SCR

Case Type: D2PAK

Device Datasheet

Technical Specifications

Average Gate Power (P_G(AV))

1 W

Forward Voltage (V_TM)

1.8 V

(1.3 V Typical)

Gate Trigger Current (I_GT)

15 mA

(3 mA Typical)

Gate Trigger Voltage (V_GT)

1.5 V

(0.9 V Typical)

Holding Current (I_H)

20 mA

(7.3 mA Typical)

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

4 A

Peak Forward Gate Voltage (V_FGM)

16 V

Peak Gate Power (P_GM)

40 W

Peak Off-State Blocking Current (I_DRM)

10 µA

Peak Off-State Blocking Current (I_DRM)

2 mA

Peak One Cycle Surge Current (I_TSM)

70 A

Peak Repetitive Off-State Voltage (V_DRM)

600 V

Peak Repetitive Reverse Voltage (V_RRM)

600 V

Peak Reverse Gate Voltage (V_RGM)

5 V

Rate of Rise of On-State Current (di/dt)

50 A/µs

Rate of Rise of Reverse Voltage (dv/dt)

200 V/µs

RMS On-State Current (I_T(RMS))

8 A

Storage Temperature (T_stg)

-40 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

60 °C/W

Thermal Resistance Junction-Case (Θ_JC)

2.5 °C/W

ueak Reverse Blocking Current (I_RRM)

10 µA

ueak Reverse Blocking Current (I_RRM)

2 mA

Value For Fusing (I²T)

24 A²s

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CSDD-8M TR13	Tape & Reel@800		Discontinued, Stock Only	8A,600V Surface mount SCR	EAR99	8541.30.0080	PBFREE

Resources


Item	Type
No matching documents found.
CSDD-8B.PDF	Device Datasheet
Material Composition:D2PAK	Material Composition
Package Detail Document:D2PAK	Package Detail Document
Product Reliability Data:D2PAK Package Reliability	Product Reliability Data