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CQ202-4DS-2

4A,400V Through-Hole TRIAC

Case Type: TO-202-2

Device Datasheet

Technical Specifications

Average Gate Power (P_G(AV))

200 mW

Forward Voltage (V_TM)

1.6 V

(1.25 V Typical)

Gate Trigger Current (I_GT)

5 mA

(2.5 mA Typical)

Gate Trigger Current (I_GT)

9 mA

(5.4 mA Typical)

Gate Trigger Voltage (V_GT)

1.75 V

Holding Current (I_H)

5 mA

(1.6 mA Typical)

Junction Temperature (T_j)

-40 — 125 °C

Peak Forward Gate Current (I_FGM)

1.2 A

Peak Gate Power (P_GM)

3 W

Peak Off-State Blocking Current (I_DRM)

10 µA

Peak Off-State Blocking Current (I_DRM)

200 µA

Peak One Cycle Surge Current (I_TSM)

40 A

Peak One Cycle Surge Current (I_TSM)

35 A

Peak Repetitive Off-State Voltage (V_DRM)

400 V

Rate of Rise of Reverse Voltage (dv/dt)

11 V/µs

RMS On-State Current (I_T(RMS))

4 A

Storage Temperature (T_stg)

-40 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

60 °C/W

Thermal Resistance Junction-Case (Θ_JC)

7.5 °C/W

Value For Fusing (I²T)

6 A²s

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CQ202-4DS-2	Box@750		Discontinued	4A,400V Through-Hole TRIAC	EAR99	8541.30.0080	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
CQ202-4BS-2.PDF	Device Datasheet
Material Composition:TO-202-2	Material Composition
Package Detail Document:TO-202-2	Package Detail Document
Product EOL Notice:CQ202 Series	Product EOL Notice