CQ202-4NS

4A,800V Through-Hole TRIAC

Case Type: TO-202

Average Gate Power (PG(AV))
200 mW
Forward Voltage (VTM)
1.75 V

(1.25 V Typical)

Gate Trigger Current (IGT)
5 mA

(2.5 mA Typical)

Gate Trigger Current (IGT)
9 mA

(5.4 mA Typical)

Gate Trigger Voltage (VGT)
1.75 V
Holding Current (IH)
5 mA

(1.6 mA Typical)

Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current (IFGM)
1.2 A
Peak Gate Power (PGM)
3 W
Peak Off-State Blocking Current (IDRM)
10 µA
Peak Off-State Blocking Current (IDRM)
200 µA
Peak One Cycle Surge Current (ITSM)
40 A
Peak One Cycle Surge Current (ITSM)
35 A
Peak Repetitive Off-State Voltage (VDRM)
800 V
Rate of Rise of Reverse Voltage (dv/dt)
11 V/µs
RMS On-State Current (IT(RMS))
4 A
Storage Temperature (Tstg)
-40 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
60 °C/W
Thermal Resistance Junction-Case (ΘJC)
7.5 °C/W
Value For Fusing (I²T)
6 A2s

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CQ202-4NS Box@500 Discontinued 4A,800V Through-Hole TRIAC EAR99 8541.30.0080 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
CQ202-4BS.PDF Device Datasheet
Material Composition:TO-202 Material Composition
Package Detail Document:TO-202 Package Detail Document
Product EOL Notice:CQ202 Series Product EOL Notice
Product Reliability Data:TO-202 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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