2N6035
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-126
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 2 A
VCE = 3 V
Test Conditions
IC = 4 A
IB = 40 mA
Test Conditions
VCB = 60 V
Test Conditions
IC = 100 mA
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
TC = 125 °C
Test Conditions
VCE = 60 V
Test Conditions
IC = 2 A
IB = 8 mA
Test Conditions
IC = 4 A
IB = 40 mA
Test Conditions
VCE = 10 V
IC = 750 mA
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 500 mA
Test Conditions
VCE = 3 V
IC = 2 A
Test Conditions
VCE = 3 V
IC = 4 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6035 | Sleeve@50 | Discontinued | 4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6034-2N6039.PDF | Device Datasheet |
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |