2N6040

8A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4.5 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
20 µA
Collector-Emitter Cutoff Current (ICEV)
200 µA
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
4 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current (IB)
120 mA
Continuous Collector Current (IC)
8 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
1 — 20 x103
DC Current Gain (hFE)
100
Emitter-Base Cutoff Current (IEBO)
2 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
300 pF
Peak Collector Current (ICM)
16 A
Power Dissipation (PD)
75 W
Small Signal Current Gain (hfe)
300
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
1.67 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N6040 Sleeve@50 Discontinued 8A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington EAR99 8541.29.0095 PBFREE

Resources

2N6040-6045.PDF Device Datasheet
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-220 Material Composition
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data

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