2N6058
12A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 6 A
VCE = 3 V
Test Conditions
IC = 12 A
IB = 120 mA
Test Conditions
IC = 100 mA
Test Conditions
VCE = 40 V
Test Conditions
VCE = 80 V
VEB = 1.5 V
Test Conditions
VCE = 80 V
TC = 150 °C
VEB = 1.5 V
Test Conditions
IC = 6 A
IB = 24 mA
Test Conditions
IC = 12 A
IB = 120 mA
Test Conditions
VCE = 3 V
IC = 5 A
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 6 A
Test Conditions
VCE = 3 V
IC = 12 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Test Conditions
VCE = 3 V
IC = 5 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6058 | Sleeve@20 | Discontinued | 12A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6057-6059.PDF | Device Datasheet |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N6059 | Process Change Notice |
| Process Change Notice:2N6059 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
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