2N6298
8A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-66
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 4 A
VCE = 3 V
Test Conditions
IC = 8 A
IB = 80 mA
Test Conditions
IC = 100 mA
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 30 V
Test Conditions
IC = 4 A
IB = 16 mA
Test Conditions
IC = 8 A
IB = 80 mA
Test Conditions
VCE = 3 V
IC = 3 A
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 4 A
Test Conditions
VCE = 3 V
IC = 8 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Test Conditions
VCE = 3 V
IC = 3 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6298 | Sleeve@30 | Active | 8A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.29.0095 | LEAD or TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6298-6301.PDF | Device Datasheet |
| Analytical Test Report:Leads | Analytical Test Report |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP517 replaced by CP527 | Process Change Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |
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