2N6668
10A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 5 A
VCE = 3 V
Test Conditions
IC = 10 A
VCE = 3 V
Test Conditions
IC = 200 mA
RBE = 100 Ω
Test Conditions
IC = 200 mA
VBE(OFF) = 1.5 V
Test Conditions
IC = 200 mA
Test Conditions
VCE = 80 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 80 V
VBE(OFF) = 1.5 V
TC = 125 °C
Test Conditions
VCE = 80 V
Test Conditions
IC = 5 A
IB = 10 mA
Test Conditions
IC = 10 A
IB = 100 mA
Test Conditions
VCE = 5 V
IC = 1 A
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 5 A
Test Conditions
VCE = 3 V
IC = 10 A
Test Conditions
VEB = 5 V
Test Conditions
IF = 10 A
Test Conditions
VCE = 20 V
tp = 1 s
Test Conditions
VBE = 1.5 V
IC = 4.5 A
L = 3 mH
RBE = 100 Ω
Test Conditions
VCE = 5 V
IC = 1 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6668 | Sleeve@50 | Discontinued | 10A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP092.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:SE9300 and SE9400 Series | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
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Design Support
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