BD676
4A,45V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-126
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 2 A
VCE = 3 V
Test Conditions
VCB = 45 V
Test Conditions
VCB = 27 V
TC = 150 °C
Test Conditions
IC = 50 mA
Test Conditions
VCE = 22.5 V
Test Conditions
IC = 2 A
IB = 6 mA
Test Conditions
VCE = 3 V
IC = 2 A
Test Conditions
VEB = 5 V
Test Conditions
VCE = 50 V
tp = 20 ms
Test Conditions
VCE = 40 V
tp = 20 ms
Test Conditions
VCE = 3 V
IC = 2 A
f = 1 MHz
Test Conditions
VCC = 30 V
IC = 1.5 A
IB1 = 6 mA
(1.5 µs Typical)
Test Conditions
VCC = 30 V
IC = 1.5 A
IB1 = 6 mA
(0.3 µs Typical)
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| BD676 | Sleeve@50 | Discontinued | 4A,45V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| BD676_SERIES.PDF | Device Datasheet |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |
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Design Support
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