BD680A

4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Case Type: TO-126

Base-Emitter On Voltage (V_BE(ON))

2.5 V

Collector-Base Cutoff Current (I_CBO)

200 µA

Collector-Base Cutoff Current (I_CBO)

2 mA

Collector-Base Voltage (V_CBO)

80 V

Collector-Emitter Breakdown Voltage (BV_CEO)

80 V

Collector-Emitter Cutoff Current (I_CEO)

500 µA

Collector-Emitter Saturation Voltage (V_CE(SAT))

2.8 V

Collector-Emitter Voltage (V_CEO)

80 V

Continuous Base Current (I_B)

100 mA

Continuous Collector Current (I_C)

4 A

DC Current Gain (h_FE)

750

Emitter-Base Cutoff Current (I_EBO)

2 mA

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

40 W

Small Signal Current Gain (h_fe)

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Case (Θ_JC)

3.13 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
BD680A	Sleeve@50		Discontinued	4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington	EAR99	8541.29.0095	PBFREE


Item	Type
No matching documents found.
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LSSGP087.PDF	Device Datasheet
Material Composition:TO-126	Material Composition
Package Detail Document:TO-126	Package Detail Document
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-126 Package Reliability	Product Reliability Data