BU807
8A,150V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 5 A
IB = 50 mA
Test Conditions
IC = 100 mA
Test Conditions
VCE = 330 V
Test Conditions
VCE = 330 V
VBE(OFF) = 6 V
Test Conditions
IC = 5 A
IB = 50 mA
Test Conditions
VEB = 6 V
Test Conditions
IF = 4 A
Test Conditions
VCC = 100 V
IC = 5 A
IB1 = 50 mA
IB2 = 500 mA
(0.4 µs Typical)
Test Conditions
VCC = 100 V
IC = 5 A
IB1 = 50 mA
IB2 = 500 mA
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| BU807 | Sleeve@50 | Discontinued | 8A,150V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| BU806_SERIES.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:BU807 | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
Product Support
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Design Support
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- Application and design sample kits
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