D40C4

500mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Case Type: TO-202

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
500 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCES)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
10 — 70 x103
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
13 V
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current (ICM)
1 A
Power Dissipation (PD)
6.25 W
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
20 °C/W
Turn Off Time (toff)
1200 ns
Turn On Time (ton)
120 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
D40C4 Sleeve@50 Discontinued 500mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
D40C4.PDF Device Datasheet
Material Composition:TO-202 Material Composition
Package Detail Document:TO-202 Package Detail Document
Product EOL Notice:All Product in the TO-202 and Product EOL Notice
Product Reliability Data:TO-202 Package Reliability Product Reliability Data

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