MJ1000

8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Case Type: TO-3

Base-Emitter On Voltage (V_BE(ON))

2.5 V

Collector-Base Voltage (V_CBO)

60 V

Collector-Emitter Breakdown Voltage (BV_CEO)

60 V

Collector-Emitter Cutoff Current (I_CER)

1 mA

Collector-Emitter Cutoff Current (I_CER)

5 mA

Collector-Emitter Cutoff Current (I_CEO)

500 µA

Collector-Emitter Saturation Voltage (V_CE(SAT))

2 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

4 V

Collector-Emitter Voltage (V_CEO)

60 V

Continuous Base Current (I_B)

100 mA

Continuous Collector Current (I_C)

8 A

DC Current Gain (h_FE)

1000

DC Current Gain (h_FE)

750

Emitter-Base Cutoff Current (I_EBO)

2 mA

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-55 — 200 °C

Power Dissipation (P_D)

90 W

Storage Temperature (T_stg)

-55 — 200 °C

Thermal Resistance Junction-Case (Θ_JC)

1.94 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MJ1000	Sleeve@20		Discontinued	8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington	EAR99	8541.29.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Cap and Assembly	Analytical Test Report
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Leads	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
LSSGP085.PDF	Device Datasheet
Material Composition:TO-3	Material Composition
Package Detail Document:TO-3	Package Detail Document
Process Change Notice:2N6059	Process Change Notice
Process Change Notice:2N6059	Process Change Notice
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-3 Package Reliability	Product Reliability Data