MJ1001
8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 3 A
VCE = 3 V
Test Conditions
IC = 100 mA
Test Conditions
VCE = 80 V
RBE = 1 kΩ
Test Conditions
VCE = 80 V
RBE = 1 kΩ
TC = 150 °C
Test Conditions
VCE = 40 V
Test Conditions
IC = 3 A
IB = 12 mA
Test Conditions
IC = 8 A
IB = 40 mA
Test Conditions
VCE = 2 V
IC = 3 A
Test Conditions
VCE = 3 V
IC = 4 A
Test Conditions
VEB = 5 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| MJ1001 | Sleeve@20 | Discontinued | 8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP085.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N6059 | Process Change Notice |
| Process Change Notice:2N6059 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
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