MJ11013
30A,90V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 20 A
IB = 200 mA
Test Conditions
IC = 30 A
IB = 300 mA
Test Conditions
IC = 100 mA
Test Conditions
VCE = 90 V
RBE = 1 kΩ
Test Conditions
VCE = 90 V
RBE = 1 kΩ
TC = 150 °C
Test Conditions
VCE = 50 V
Test Conditions
IC = 20 A
IB = 200 mA
Test Conditions
IC = 30 A
IB = 300 mA
Test Conditions
VCE = 3 V
IC = 10 A
f = 1 MHz
Test Conditions
VCE = 5 V
IC = 20 A
Test Conditions
VCE = 5 V
IC = 30 A
Test Conditions
VEB = 5 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| MJ11013 | Sleeve@20 | Discontinued | 30A,90V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP085.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:MJ11013 / MJ11014 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |