TIP101
8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 8 A
VCE = 4 V
Test Conditions
VCB = 80 V
Test Conditions
IC = 30 mA
Test Conditions
VCE = 40 V
Test Conditions
IC = 3 A
IB = 6 mA
Test Conditions
IC = 8 A
IB = 80 mA
Test Conditions
VCE = 4 V
IC = 3 A
f = 1 MHz
Test Conditions
VCE = 4 V
IC = 3 A
Test Conditions
VCE = 4 V
IC = 8 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| TIP101 | Sleeve@50 | Discontinued | 8A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:TIP100 Series | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
| TIP100-TIP102.PDF | Device Datasheet |
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Design Support
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