TIP127
5A,100V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 3 A
VCE = 3 V
Test Conditions
VCB = 100 V
Test Conditions
IC = 100 mA
Test Conditions
VCE = 50 V
Test Conditions
IC = 3 A
IB = 12 mA
Test Conditions
IC = 5 A
IB = 20 mA
Test Conditions
VCE = 4 V
IC = 3 A
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 500 mA
Test Conditions
VCE = 3 V
IC = 3 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Ordering
Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
---|---|---|---|---|---|---|---|
TIP127 | Sleeve@50 | Discontinued | 5A,100V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.90.0000 | PBFREE | |
TIP127 SL | Sleeve@50 | Discontinued | 5A,100V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | EAR99 | 8541.90.0000 | PBFREE |
Resources
Item | Type |
---|---|
No matching documents found. | |
Analytical Test Report:Die Attach | Analytical Test Report |
Analytical Test Report:Leadframe | Analytical Test Report |
Analytical Test Report:Sn Plating | Analytical Test Report |
Analytical Test Report:Tin Plating | Analytical Test Report |
Material Composition:TO-220 | Material Composition |
Package Detail Document:TO-220 | Package Detail Document |
Product EOL Notice:Power transistors bare die and | Product EOL Notice |
Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
TIP120-TIP122.PDF | Device Datasheet |
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