TIP136

8A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
2.5 V
Collector-Base Cutoff Current (ICBO)
200 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
3 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current (IB)
300 mA
Continuous Collector Current (IC)
8 A
DC Current Gain (hFE)
500
DC Current Gain (hFE)
1 — 15 x103
Emitter-Base Cutoff Current (IEBO)
5 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
12 A
Power Dissipation (PD)
2 W
Power Dissipation (PD)
70 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
63.5 °C/W
Thermal Resistance Junction-Case (ΘJC)
1.78 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
TIP136 Sleeve@50 Discontinued 8A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
LSSGP094.PDF Device Datasheet
Material Composition:TO-220 Material Composition
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:TIP130 Series Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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