2N1481

40V,1.5A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
3 V
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Cutoff Current (ICBO)
500 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEV)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.4 V
Collector-Emitter Voltage (VCEV)
60 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
1.5 A
DC Current Gain (hFE)
35 — 100
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 pF
Power Dissipation (PD)
5 W
Small Signal Current Gain (hfe)
50
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
35 °C/W
Turn Off Time (toff)
1.6 µs
Turn On Time (ton)
1.2 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N1481 Box@500 Active 40V,1.5A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 LEAD or TIN

Resources

2N1479-1482.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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