2N2221A

40V,800mA,400mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Time Constant (rb'Cc)
150 ps
Collector-Base Voltage (VCBO)
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
10 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
800 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
20
DC Current Gain (hFE)
25
DC Current Gain (hFE)
35
DC Current Gain (hFE)
15
DC Current Gain (hFE)
40 — 120
DC Current Gain (hFE)
20
DC Current Gain (hFE)
25
Delay Time (td)
10 ns
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Fall Time (tf)
60 ns
Input Capacitance (Cib)
25 pF
Input Impedance Common Emitter (hie)
1 — 3.5 kΩ
Input Impedance Common Emitter (hie)
0.2 — 1 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Output Admittance Common Emitter (hoe)
3 — 15 µS
Output Admittance Common Emitter (hoe)
10 — 100 µS
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
400 mW
Power Dissipation (PD)
1.2 W
Rise Time (tr)
25 ns
Small Signal Current Gain (hfe)
30 — 150
Small Signal Current Gain (hfe)
50 — 300
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient (ΘJA)
438 °C/W
Thermal Resistance Junction-Case (ΘJC)
146 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.5 x10-3
Voltage Feedback Ratio Common Emitter (hre)
0.25 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2221A Box@2,000 Discontinued 40V,800mA,400mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current EAR99 8541.21.0075 PBFREE

Resources

2N2221A.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product EOL Notice:2N2218A Product EOL Notice
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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