2N2303

35V,.6W Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Breakdown Voltage (BVCER)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCEO)
35 V
Collector-Emitter Voltage (VCER)
50 V
DC Current Gain (hFE)
75 — 200
DC Current Gain (hFE)
75
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
45 pF
Power Dissipation (PD)
0.6 W
Power Dissipation (PD)
2 W
Small Signal Current Gain (hfe)
3
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2303 Box@500 Active 35V,.6W Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP060.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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