2N2484A

60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-18

Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
2 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20
DC Current Gain (hFE)
175
DC Current Gain (hFE)
250
DC Current Gain (hFE)
800
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
6 pF
Input Impedance Common Emitter (hie)
3.5 — 24 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Admittance Common Emitter (hoe)
40 µS
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
360 mW
Small Signal Current Gain (hfe)
150 — 900
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
486 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2484A Box@2,000 Active 60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0095 PBFREE

Resources

2N2484A.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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