2N2727

150V,500mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
3 V
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Breakdown Voltage (BVCER)
200 V
Collector-Emitter Cutoff Current (ICEO)
250 µA
Collector-Emitter Cutoff Current (ICEV)
300 µA
Collector-Emitter Cutoff Current (ICEV)
150 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Voltage (VCEO)
150 V
Collector-Emitter Voltage (VCER)
200 V
Continuous Base Current (IB)
250 mA
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
75 — 150
DC Current Gain (hFE)
30
Emitter-Base Cutoff Current (IEBO)
250 µA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
1 W
Power Dissipation (PD)
5 W
Small Signal Current Gain (hfe)
75
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2727 Box@500 Active 150V,500mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage EAR99 8541.29.0095 PBFREE

Resources

2N2726.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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