2N2920

60V,30mA,300mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier

Case Type: TO-78

Base-Emitter On Voltage (VBE(ON))
700 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
3 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
10 µV/°C
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
10 µV/°C
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
2 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
2 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
30 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
150 — 600
DC Current Gain (hFE)
40
DC Current Gain (hFE)
225
DC Current Gain (hFE)
300
DC Current Gain Matching (hFE1/hFE2)
0.9 — 1
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage (VEBO)
6 V
Input Impedance Common Base (hib)
25 — 32 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Admittance Common Base (hob)
1 µS
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
750 mW
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
1.5 W
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2920 Box@100 Discontinued 60V,30mA,300mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier EAR99 8541.21.0095 PBFREE

Resources

2N2920.PDF Device Datasheet
Material Composition:TO-78 Material Composition
Package Detail Document:TO-78 Package Detail Document
Product EOL Notice:TO-78 CASE Product EOL Notice
Spice Model:Spice Model 2N2920 Spice Model

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