2N3019
80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 150 mA
IB = 15 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 90 V
Test Conditions
VCB = 90 V
TA = 150 °C
Test Conditions
VCB = 10 V
f = 4 MHz
IC = 10 mA
Test Conditions
IC = 30 mA
Test Conditions
IC = 150 mA
IB = 15 mA
Test Conditions
IC = 500 mA
IB = 50 mA
Test Conditions
VCE = 10 V
IC = 50 mA
f = 20 MHz
Test Conditions
VCE = 10 V
IC = 100 µA
Test Conditions
VCE = 10 V
IC = 10 mA
Test Conditions
VCE = 10 V
IC = 150 mA
Test Conditions
VCE = 10 V
IC = 150 mA
TA = -55 °C
Test Conditions
VCE = 10 V
IC = 500 mA
Test Conditions
VCE = 10 V
IC = 1 A
Test Conditions
IE = 100 µA
Test Conditions
VEB = 5 V
Test Conditions
VEB = 0.5 V
f = 1 MHz
Test Conditions
VCE = 10 V
IC = 100 µA
f = 1 kHz
RS = 1 kΩ
Test Conditions
VCB = 10 V
f = 1 MHz
Ordering
Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
---|---|---|---|---|---|---|---|
2N3019 | Box@500 | Active | 80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | EAR99 | 8541.21.0075 | LEAD or TIN |
Resources
Item | Type |
---|---|
No matching documents found. | |
2N3019 SERIES.PDF | Device Datasheet |
Package Detail Document:TO-237 | Package Detail Document |
Product EOL Notice:TO-237 Transisitors | Product EOL Notice |
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