2N3109

40V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
10 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
30
DC Current Gain (hFE)
40
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
7 V
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
7 dB
Output Capacitance (Cob)
20 pF
Power Dissipation (PD)
800 mW
Power Dissipation (PD)
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
200 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3109 Box@500 Active 40V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP061.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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