2N3114
150V,200mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 50 mA
IB = 5 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 100 V
Test Conditions
VCB = 100 V
TA = 150 °C
Test Conditions
IC = 30 mA
Test Conditions
IC = 50 mA
IB = 5 mA
Test Conditions
VCE = 10 V
IC = 30 mA
f = 20 MHz
Test Conditions
VCE = 10 V
IC = 100 µA
Test Conditions
VCE = 10 V
IC = 30 mA
Test Conditions
VCE = 10 V
IC = 30 mA
TA = -55 °C
Test Conditions
IE = 100 µA
Test Conditions
VEB = 4 V
Test Conditions
VEB = 0.5 V
f = 140 kHz
Test Conditions
VCB = 20 V
f = 140 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N3114 | Box@500 | Active | 150V,200mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | EAR99 | 8541.21.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N3114.PDF | Device Datasheet |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |
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