2N3117

60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-18

Base-Emitter On Voltage (VBE(ON))
700 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
100
DC Current Gain (hFE)
250 — 500
DC Current Gain (hFE)
50
DC Current Gain (hFE)
300
DC Current Gain (hFE)
400
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
6 pF
Input Impedance Common Emitter (hie)
10 — 24 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
1 dB
Noise Figure (NF)
1 dB
Noise Figure (NF)
4 dB
Noise Figure (NF)
15 dB
Output Admittance Common Emitter (hoe)
40 µS
Output Capacitance (Cob)
4.5 pF
Power Dissipation (PD)
360 mW
Power Dissipation (PD)
680 mW
Power Dissipation (PD)
1.2 W
Small Signal Current Gain (hfe)
400 — 900
Storage Temperature (Tstg)
-65 — 200 °C
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3117 Box@2,000 Active 60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0095 LEAD or TIN

Resources

2N3117.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N3117 Spice Model

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