2N3246

45V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.9 V
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
1 nA
Collector-Base Cutoff Current (ICBO)
2 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
0.5 V
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
60 — 180 MHz
DC Current Gain (hFE)
150
DC Current Gain (hFE)
200 — 600
DC Current Gain (hFE)
300
DC Current Gain (hFE)
350
DC Current Gain (hFE)
400
DC Current Gain (hFE)
800
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Cutoff Current (IEBO)
1 nA
Emitter-Base Voltage (VEBO)
10 V
Input Impedance Common Base (hib)
24 — 32 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
2 dB
Output Admittance Common Base (hob)
0.1 — 1 µS
Output Capacitance (Cob)
5 pF
Power Dissipation (PD)
350 mW
Small Signal Current Gain (hfe)
200 — 600
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
0.5 °C/W
Voltage Feedback Ratio Common Base (hrb)
0.6 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3246 Box@2,000 Active 45V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0075 PBFREE

Resources

2N3246.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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