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2N3250

40V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Case Type: TO-18

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
600 — 900 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
20 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
45
DC Current Gain (hFE)
50 — 150
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
360 mW
Power Dissipation (PD)
1.2 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
486 °C/W
Thermal Resistance Junction-Case (ΘJC)
145 °C/W
Turn Off Time (toff)
225 ns
Turn On Time (ton)
70 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3250 Box@2,000 Active 40V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch EAR99 8541.21.0075 LEAD or TIN

Resources

Item Type
2N3250.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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