2N3302

30V,1.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
10 nA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
220 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
30 V
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
50
DC Current Gain (hFE)
35
DC Current Gain (hFE)
50
DC Current Gain (hFE)
100
DC Current Gain (hFE)
300
DC Current Gain (hFE)
50
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
20 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
1.8 W
Power Dissipation (PD)
0.36 W
Small Signal Current Gain (hfe)
2.5
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
486 °C/W
Thermal Resistance Junction-Case (ΘJC)
97.3 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3302 Box@2,000 Active 30V,1.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP056.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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