2N3414

25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-92

Base-Emitter Saturation Voltage (V_BE(SAT))

0.85 V

Collector-Base Cutoff Current (I_CBO)

100 nA

Collector-Base Voltage (V_CBO)

25 V

Collector-Emitter Breakdown Voltage (BV_CEO)

25 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

0.3 V

Collector-Emitter Voltage (V_CEO)

25 V

Continuous Collector Current (I_C)

500 mA

DC Current Gain (h_FE)

75 — 225

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

625 mW

Power Dissipation (P_D)

1.5 W

Small Signal Current Gain (h_fe)

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N3414	Box@2,500		Discontinued	25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise	EAR99	8541.21.0095	LEAD or TIN


Item	Type
No matching documents found.
2N3414-3417.PDF	Device Datasheet
Analytical Test Report:Copper Bonding Wire	Analytical Test Report
Analytical Test Report:Epoxy Adhesive	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Halogen Free	Analytical Test Report
Analytical Test Report:Lead Frame	Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn	Analytical Test Report
Material Composition:TO-92	Material Composition
Package Detail Document:TO-92	Package Detail Document
Product EOL Notice:CMPT930	Product EOL Notice
Product Reliability Data:TO-92 Package Reliability	Product Reliability Data