2N3439

350V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Base Voltage (VCBO)
450 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current (IB)
500 mA
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
40 — 160
Emitter-Base Cutoff Current (IEBO)
20 µA
Emitter-Base Voltage (VEBO)
7 V
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Power Dissipation (PD)
1 W
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3439 Box@500 Active 350V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage EAR99 8541.29.0095 LEAD or TIN

Resources

2N3439.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N3439 Spice Model

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