2N3496

80V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
600 — 900 mV
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
100 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
DC Current Gain (hFE)
35
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Cutoff Current (IEBO)
25 nA
Emitter-Base Voltage (VEBO)
4.5 V
Input Capacitance (Cib)
30 pF
Input Impedance Common Emitter (hie)
0.1 — 1.2 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Output Admittance Common Emitter (hoe)
300 µS
Output Capacitance (Cob)
7 pF
Power Dissipation (PD)
400 mW
Power Dissipation (PD)
1.8 W
Small Signal Current Gain (hfe)
40 — 300
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
450 ns
Turn On Time (ton)
300 ns
Voltage Feedback Ratio Common Emitter (hre)
0.2 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3496 Box@2,000 Active 80V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch EAR99 8541.21.0075 LEAD or TIN

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP056.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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