2N3548

45V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1 V
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Cutoff Current (ICES)
10 nA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
100 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
150
DC Current Gain (hFE)
600
DC Current Gain (hFE)
20
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
400 mW
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3548 Box@2,000 Active 45V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP056.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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