2N3700

80V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Time Constant (rb'Cc)
25 — 400 ps
Collector-Base Voltage (VCBO)
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
100 — 400 MHz
DC Current Gain (hFE)
50
DC Current Gain (hFE)
90
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
40
DC Current Gain (hFE)
50
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
7 V
Input Capacitance (Cib)
60 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
12 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
1.8 W
Small Signal Current Gain (hfe)
80 — 400
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
350 °C/W
Thermal Resistance Junction-Case (ΘJC)
97.2 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3700 Box@2,000 Active 80V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current EAR99 8541.21.0075 LEAD or TIN

Resources

2N3700.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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