2N3710

30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-92

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current (IC)
200 mA
DC Current Gain (hFE)
90 — 330
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
625 mW
Small Signal Current Gain (hfe)
90 — 450
Storage Temperature (Tstg)
-65 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3710 Box@2,500 Active 30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0095 LEAD or TIN

Resources

2N3707-3711.PDF Device Datasheet
Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

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