2N3738
225V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Case Type: TO-66
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 100 mA
VCE = 10 V
Test Conditions
VCB = 250 V
Test Conditions
IC = 5 mA
Test Conditions
VCE = 250 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 125 V
VBE(OFF) = 1.5 V
TC = 100 °C
Test Conditions
VCE = 125 V
Test Conditions
IC = 250 mA
IB = 25 mA
Test Conditions
VCE = 10 V
IC = 100 mA
f = 10 MHz
Test Conditions
VCE = 10 V
IC = 50 mA
Test Conditions
VCE = 10 V
IC = 100 mA
Test Conditions
VCE = 10 V
IC = 250 mA
Test Conditions
VEB = 6 V
Test Conditions
VCB = 100 V
f = 100 kHz
Test Conditions
VCE = 20 V
IC = 100 mA
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N3738 | Sleeve@30 | Discontinued | 225V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N3738-3739.PDF | Device Datasheet |
| Analytical Test Report:Leads | Analytical Test Report |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP319 replaced by CP212 | Process Change Notice |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |
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Design Support
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