2N3839

15V,40mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-72

Amplifier Power Gain (Gpe)
12.5 — 19 dB
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Time Constant (rb'Cc)
1 — 15 ps
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
40 mA
Current Gain-Bandwidth Product (fT)
1000 — 2000 MHz
DC Current Gain (hFE)
30 — 150
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage (VEBO)
2.5 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3.9 dB
Output Capacitance (Cob)
1 pF
Power Dissipation (PD)
200 mW
Power Dissipation (PD)
300 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3839 Box@2,000 Active 15V,40mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator EAR99 8541.21.0095 LEAD or TIN

Resources

2N2857.PDF Device Datasheet
Analytical Test Report:Aluminum Wire Analytical Test Report
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-72 Material Composition
Package Detail Document:TO-72 Package Detail Document
Process Change Notice:HEADER TO-72 Process Change Notice
Process Change Notice:TO-72 Case Process Change Notice
Process Change Notice:TO-72 CASE Process Change Notice
Product Reliability Data:TO-72 Package Reliability Product Reliability Data

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